Peculiarities of High Power Infrared Detection on Narrow-Gap Semiconductor p-n Junctions
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چکیده
منابع مشابه
Lead Telluride p-n Junctions for Infrared Detection: Electrical and Optical Characteristics
PbTe mesa diodes were fabricated from a series of p−n junctions grown on BaF2 substrates. For this series, the hole concentration was kept constant at 1017 cm−3 and the electron concentration varied between 1017 and 1019 cm−3. Capacitance versus voltage analysis revealed that for n > 1018 cm−3, a one-sided abrupt junction is formed. The direct and reverse branches of the current versus voltage ...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2011
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.119.237